Samsung to use TSMC technology for Nvidia's next-generation memory chips, Seoul newspaper reports

By Reuters News

SEOUL, Oct 18 (Reuters) - Samsung Electronics 005930.KS will use TSMC's 2330.TW 3-nanometre process to produce base dies for Nvidia's NVDA.O next-generation custom high-bandwidth memory (HBM) chips, the Seoul Economic Daily reported on Sunday.

The move would mark the first time Samsung has worked with the Taiwanese contract chipmaker at the HBM manufacturing stage, according to the report.


  • Nvidia has asked Samsung, SK Hynix 000660.KS and Micron Technology MU.O to use TSMC's process for NVHBM base dies, and sixth-generation DRAM technology for its core dies, the newspaper said, citing industry sources.

  • NVHBM, unveiled in August, integrates Nvidia's custom memory controller into the base die and is aimed at standardising implementation across multiple memory suppliers, according to the company.

  • Samsung accepted Nvidia's requirements after an internal review but plans to retain its in-house production model for standard HBM and custom products for other customers, Seoul Economic Daily said.

  • It is also assessing whether its own foundry could produce NVHBM base dies if demand exceeds TSMC's capacity, the newspaper quoted an unnamed source as saying.

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