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Infineon - Establishes Production Facility For Gallium Nitride Power Semiconductors On 300-Millimetre Wafers In Europe

By Reuters News

Oct 27 (Reuters) - INFINEON TECHNOLOGIES AG IFXGn.DE:

  • INFINEON TECHNOLOGIES AG - ESTABLISHING THE WORLD’S FIRST HIGH-VOLUME PRODUCTION FACILITY FOR GALLIUM NITRIDE POWER SEMICONDUCTORS ON 300-MILLIMETRE WAFERS IN EUROPE

  • INFINEON TECHNOLOGIES AG - INVESTMENT OF 1.1 BILLION EUROS IN THE VILLACH SITE AS A GLOBAL COMPETENCE CENTER FOR POWER SEMICONDUCTORS

  • INFINEON TECHNOLOGIES AG - FUNDING AMOUNTING TO 319 MILLION EUROS UNDER THE EUROPEAN CHIPS ACT TO STRENGTHEN TECHNOLOGICAL SOVEREIGNTY

  • INFINEON TECHNOLOGIES AG - PRODUCTION IS SCHEDULED TO START AT THE END OF 2027

Further company coverage: [IFXGn.DE]

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